transistor(pnp) features z high current surface mount pnp s ilicon switching transistor for load management in portable applications marking :589 maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage -50 v v ceo collector-emitter voltage -30 v v ebo emitter-base voltage -5 v i c collector current -continuous -1 a p c collector power dissipation 310 mw r ja thermal resistance, junction to ambient 403 /w t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =-100 a,i e =0 -50 v collector-emitter breakdown voltage v (br)ceo i c =-10ma,i b =0 -30 v emitter-base breakdown voltage v (br)ebo i e =-100 a,i c =0 -5 v collector cut-off current i cbo v cb =-30v,i e =0 -0.1 a collector-emitter cut-off current i ces v ces =-30v -0.1 a emitter cut-off current i ebo v eb =-4v,i c =0 -0.1 a h fe1 v ce =-2v,i c =-1ma 100 h fe2 v ce =-2v,i c =-500ma 100 300 h fe3 v ce =-2v,i c =-1a 80 dc current gain h fe4 v ce =-2v,i c =-2a 40 v ce(sat)1 i c = -500ma, i b =-50ma -0.25 v v ce(sat)2 i c = -1a, i b =-100ma -0.3 v collector-emitter saturation voltage v ce(sat)3 i c = -2a, i b =-200ma -0.65 v base-emitter saturation voltage v be(sat) i c = -1a, i b =-100ma -1.2 v base-emitter turn-on voltage v be(on) v ce =-2v, i c =-1a -1.1 v transition frequency f t v ce =-5v, i c =-100ma , f =100mhz 100 mhz collector output capacitance cob f=1mhz 15 pf sot-23 1. base 2. emitter 3. collector mmbt58 9 1 date:2011/05 www.htsemi.com semiconductor jinyu
mmbt58 9 2 date:2011/05 www.htsemi.com semiconductor jinyu
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